Methods of fabricating silicon carbide crystals

ABSTRACT

Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.

CLAIM OF PRIORITY

The present application is a continuation of and claims priority fromU.S. patent application Ser. No. 09/862,108, entitled “SEED CRYSTALHOLDERS AND SEED CRYSTALS FOR FABRICATING SILICON CARBIDE CRYSTALS ANDMETHODS OF FABRICATING SILICON CARBIDE CRYSTALS” and filed May 21, 2001,now U.S. Pat. No. 6,706,114 the disclosure of which is incorporatedherein by reference as if set forth in its entirety.

FIELD OF THE INVENTION

The present invention relates to the fabrication of semiconductormaterials and, more particularly, to devices for use in fabricatingsilicon carbide crystals and the fabrication of silicon carbidecrystals, for example, to produce silicon carbide boules from which asilicon carbide wafer may be provided.

BACKGROUND OF THE INVENTION

Silicon carbide (SiC) is rarely found in nature. It has, however, beenmanufactured for more than eighty years, in crystalline form, forabrasive products. Silicon carbide crystals found in nature and inabrasive products are generally black and not translucent because theycontain substantial levels of impurity atoms.

In the 1950's the Lely process was developed at General Electric Companyby which silicon carbide was sublimed and randomly deposited to producesmall, thin silicon carbide crystals that were used in early siliconcarbide semiconductor device development.

Because of the theoretically quite favorable electronic properties ofsilicon carbide, significant development activities were initiatedduring the 1960's and 1970's with the objective of growing large (bulk)crystals of low impurity silicon carbide for use in the production ofsemiconductor devices. These efforts finally resulted in the commercialavailability of relatively low impurity, translucent silicon carbidecrystals.

North Carolina State University was issued U.S. Pat. Nos. 4,866,005 andRe. 34,861 on the growth of single crystal silicon carbide through asublimation process. The disclosure of U.S. Pat. Nos. 4,866,005 and Re.34,861 are incorporated herein by reference as if set forth fullyherein. Since that time, the growth of silicon carbide crystals has beendescribed in several United States Patents, including commonly assignedU.S. Pat. No. 6,045,613 entitled “PRODUCTION OF BULK SINGLE CRYSTALS OFSILICON CARBIDE,” the disclosure of which is incorporated herein byreference as if set forth fully herein. Additional patents relating tothe growth of silicon carbide or silicon carbide alloys include commonlyassigned U.S. Pat. No. 6,048,813 entitled “SIMULATED DIAMOND GEMSTONESFORMED OF ALUMINUM NITRIDE AND ALUMINUM VITRIDE: SILICON CARBIDEALLOYS,” and U.S. Pat. No. 6,086,672 entitled “GROWTH OF BULK SINGLECRYSTALS OF ALUMINUM NITRIDE: SILICON CARBIDE ALLOYS,” the disclosuresof which are incorporated herein by reference as if set forth fullyherein.

One difficulty with silicon carbide is that silicon carbide may containmicropipes or other defects, such as dislocation defects. Such defectsmay reduce the suitability of regions of a silicon carbide wafercontaining such defects for use in a semiconductor device. For example,a transistor with such defects incorporated therein may have a higherleakage current than a corresponding transistor without such defects.Accordingly, improvements may be needed in the growth of silicon carbidecrystals.

In gallium arsenide (GaAs) and gallium nitride (GaN) growth throughchemical vapor deposition (CVD), epitaxial lateral overgrowth (ELOG) andpendeo-epitaxial growth techniques have been utilized to reduce defectsin layers of GaAs or GaN. Such techniques are, for example, illustratedin U.S. Pat. No. 4,522,661. U.S. Pat. No. 6,051,849 and U.S. Pat. No.6,177,688. However, growth of silicon carbide crystals (e.g. boules)suitable for providing wafers or substrates is typically not carried outusing CVD processes but is performed using physical vapor transport(PVT) growth, such as through a sublimation growth process as describedabove.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide methods for producingsilicon carbide crystals, seed crystal holders and seed crystals for usein producing silicon carbide crystals and silicon carbide crystals.According to embodiments of methods according to the present invention,silicon carbide crystals are produced by forcing nucleation sites of asilicon carbide seed crystal to a predefined pattern (e.g. non-random)and growing silicon carbide utilizing physical vapor transport (PVT) soas to provide selective preferential growth of silicon carbidecorresponding to the predefined pattern.

In further embodiments of the present invention, nucleation sites areforced to the predefined pattern by modulating a thermal profile of theseed crystal. Such a modulation may be provided by forming regions ofhigher thermal conductivity in a seed crystal holder. The regions ofhigher thermal conductivity correspond to the predefined pattern. Theseed crystal is mounted on the seed crystal holder.

The regions of higher thermal conductivity may be formed by removingportions of the seed crystal holder so that the seed crystal selectivelycontacts the seed crystal holder. The regions of higher thermalconductivity may correspond to regions where the seed crystal contactsthe seed crystal when the seed crystal is mounted on the seed crystalholder.

Alternatively, the regions of higher thermal conductivity may be formedby removing portions of the seed crystal holder so as to providecavities in the seed crystal holder and filling the cavities in the seedcrystal holder with a material having a higher thermal conductivity thana material of the seed crystal holder. Such cavities may be filled bycovering the seed crystal holder with a layer of the material having ahigher thermal conductivity and removing a sufficient amount of thelayer of the material of higher thermal conductivity so as to exposeportions of the seed crystal holder. In particular embodiments of thepresent invention, the material of the seed crystal holder is graphiteand the material of higher thermal conductivity is silicon carbide.

In further embodiments of the present invention, the predefined patternmay be stripes in the seed crystal holder. The predefined pattern couldalso be a pattern of posts in the seed crystal holder. The posts may besubstantially circular.

In additional embodiments of the present invention, the nucleation sitesmay be forced to a predefined pattern by forming a pattern on an exposedsurface of the seed crystal so as to provide regions of the seed crystalwhich extend beyond other regions of the seed crystal. Again, thepattern may include stripes in the seed crystal, a plurality of posts,and/or a plurality of substantially circular posts.

In still further embodiments of the present invention, nucleation sitesare forced to the predefined pattern by forming a pattern of materialother than silicon carbide on the silicon carbide seed crystal so as toprovide a pattern of regions of having a reduced sticking coefficientover other regions of the seed crystal. Possible patterns may includestripes on the seed crystal, a plurality of posts on the seed crystaland/or a layer of material having a plurality of opening therein so asto expose potions of the seed crystal. The opening in the layer may besubstantially circular. Furthermore, the material other than siliconcarbide may be graphite.

In yet additional embodiments of the present invention, a seed crystalholder for growing silicon carbide using physical vapor transport isprovided. The seed crystal holder has a body section configured to holda silicon carbide seed crystal and a plurality of regions of differingthermal conductivity in the graphite body section. The regions ofdiffering thermal conductivity have a predefined pattern and, along withthe body section, are configured to produce a thermal profile in theseed crystal corresponding to the predefined pattern.

The plurality of regions may be a plurality of cavities in the bodysection. Alternatively, the plurality of regions of differing thermalconductivity may be configured to contact the seed crystal. In suchembodiments, the regions of differing thermal conductivity may beregions of a material having a different thermal conductivity than thebody section provided within the body section. The regions of differingthermal conductivity may have a lower thermal conductivity than the bodysection of the seed holder or a higher thermal conductivity than thebody section of the seed holder. In particular embodiments of thepresent invention, the body section is made of graphite and the regionsof differing thermal conductivity are regions of silicon carbide in thebody section. Additionally, the predefined pattern comprise stripes inthe seed crystal holder, a pattern of posts in the body section and/or apattern of substantially circular posts.

In still further embodiments of the present invention, a silicon carbideseed crystal is provided. The silicon carbide seed crystal has a firstsurface and a second surface, opposite the first surface and apredefined pattern formed in the second surface so as to provide aplurality of regions of silicon carbide which extend a first distanceform the first surface of the silicon carbide crystal and a plurality ofother regions which extend a second distance, different from the firstdistance, from the first surface of the silicon carbide crystal. Thepattern is preferably formed so as to preferentially grow siliconcarbide in regions corresponding to the predefined pattern utilizingphysical vapor transport growth. Furthermore, the first distance may begreater than the second distance. In such a case, the regionscorresponding to the pattern may correspond to sidewalls of the regionsof silicon carbide which extend the first distance from the firstsurface. The pattern may be stripes of trenches in the seed crystal, aplurality of posts and/or a plurality of substantially circular posts.

In additional embodiments of the present invention, a silicon carbideseed crystal is provided including a silicon carbide crystal having afirst surface and a second surface, opposite the first surface andregions of a material other than silicon carbide on the second surfaceof the silicon carbide crystal. The material other than silicon carbidehas a sticking coefficient associated with vapor phase transport growthof silicon carbide which is less than a sticking coefficient of siliconcarbide. The pattern may be stripes of the material other than siliconcarbide on the silicon carbide crystal, a plurality of posts, aplurality of substantially circular posts and/or a layer of the materialother than silicon carbide having a plurality of openings to exposeportions of the silicon carbide crystal. The openings may besubstantially circular.

In further embodiments of the present invention, a silicon carbidecrystal is provided having first regions of silicon carbide having afirst defect density and second regions of silicon carbide having asecond defect density, the second defect density being less that thefirst defect density. The first and second regions form a predefinedpattern. The predefined pattern may be a pattern of stripes and/or apattern of circles. The second defect density may be about five timesless than the first defect density and, preferably, is about 10 times ormore less than the first defect density.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of a seed crystal, a seed crystalholder and a thermal sink according to embodiments of the presentinvention;

FIG. 2 is a schematic illustration of a seed crystal holder according toembodiments of the present invention;

FIG. 3 is a schematic illustration of a seed crystal holder according toembodiments of the present invention;

FIGS. 4A and 4B are schematic illustrations illustrating fabrication ofa silicon carbide crystal according to embodiments of the presentinvention;

FIG. 5 is a schematic illustration of a silicon carbide seed crystalaccording to embodiments of the present invention; and

FIG. 6 is a schematic illustration of a silicon carbide seed crystalhaving regions of other material thereon according to embodiments of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In thedrawings, the thickness of layers and regions are exaggerated forclarity. Like numbers refer to like elements throughout. It will beunderstood that when an element such as a layer, region or substrate isreferred to as being “on” another element, it can be directly on theother element or intervening elements may also be present. In contrast,when an element is referred to as being “directly on” another element,there are no intervening elements present.

Embodiments of the present invention provide seed crystal holders,silicon carbide seed crystals and/or method of fabricating siliconcarbide crystal. Embodiments of the present invention will now bedescribed with reference to FIGS. 1 through 6. As seen in FIG. 1, aportion of an apparatus for producing silicon carbide crystals accordingto embodiments of the present invention is illustrated. The portion ofthe apparatus illustrated in FIG. 1 includes a silicon carbide seedcrystal 10 on a seed crystal holder 12 which is, in turn, on a thermalsink 14. In the embodiments illustrated in FIG. 1, the seed holder 12includes a main body portion 16 which has a first thermal conductivityand regions 20 which have a different thermal conductivity from the mainbody portion. The regions 20 of differing thermal conductivity dividethe seed holder 12 into a pattern of regions 18 of a first thermalconductivity and regions 20 of a second thermal conductivity. Theregions 20 of differing thermal conductivity may have the same ordifferent thermal conductivities. Similarly, the pattern of regions 18may have the same or different thermal conductivities.

The first conductivity may be higher or lower than the second, however,the differential in thermal conductivity should be large enough so as toprovide a modulated thermal profile in the silicon carbide seed crystal10 so that silicon carbide is preferentially grown in a patterncorresponding to the pattern of the regions 20 of differing thermalconductivity (e.g., if the first thermal conductivity is less than thesecond thermal conductivity) or to a pattern corresponding to theregions 18 of the seed holder 12 other than the regions 20 of differingthermal conductivity (e.g., if the first thermal conductivity is greaterthan the second thermal conductivity) when silicon carbide is grown byphysical vapor transport (PVT) such as through a sublimation process.Such a modulated thermal profile provides regions of higher temperatureand regions of lower temperature in the seed crystal 10 such that growthmay preferentially occur in the regions of lower temperature over theregions of higher temperature. However, growth may occur in bothregions. Thus, the term “preferential growth” refers to growth in afirst region occurring more rapidly than growth in another region suchthat growth in the first region is “preferred” over growth in the otherregion.

The body 16 of the seed holder 12 is made of a material capable ofwithstanding the conditions of silicon carbide growth through PVT, suchas sublimation. Preferably the body 16 of the seed holder 12 is made ofgraphite, which has a thermal conductivity of 24 W/m-K. The regions 20of differing thermal conductivity are also preferably made of a materialwhich may withstand such conditions. For example, for a graphite bodyseed holder 12, silicon carbide, which has a thermal conductivity of 110W/m-K, may be used if a higher thermal conductivity is to be provided orunfilled openings may be provided if a lower thermal conductivity is tobe provided. The regions 20 may be provided through mechanical and/orchemical removal of material from the body 16 of the seed holder 12. Forexample, trenches may be formed by etching, grinding, scratching, sawingor otherwise removing material from the body 16 of the seed holder 12.Similarly, if substantially circular regions 20 are desired, the body 16of the seed holder 12 may be etched or drilled to provide such cavities.Alternatively, the seed holder 12 could be originally formed in thedesired shape.

If the regions 20 are to be filled with a material, such as siliconcarbide, such could be provided by depositing a layer of silicon carbideon the body 16 of the seed holder 12 to fill the regions 20 and thengrinding, etching or otherwise removing excess material until theregions 18 are exposed while leaving the regions 20 filled with thematerial. The seed crystal 10 could then be mounted on the seed holder12 such that the regions 20 and the regions 18 were in contact with theseed crystal 10.

The physical dimensions of the regions 20 may vary depending on thematerial utilized to fill the regions 20, if any, but should be largeenough so as to provide a modulated thermal profile of the seed crystal10 so as to cause preferential growth of silicon carbide on the seedcrystal 10 either in areas corresponding to one of the regions 20 or theregions 18. For example, for a graphite seed holder with the regions 20filled with silicon carbide, the regions 20 may have a depth of fromabout 1 mm to about 20 mm and have a width of from about 0.5 mm to about5 mm. Furthermore, the spacing between the regions 20 may be about 0.5mm or greater and, preferably, is from about 0.5 mm to about 3 mm orgreater.

As briefly discussed above, the regions 20 of differing thermalconductivity may be provided in various predefined patterns. Preferably,these patterns are symmetric patterns. Two of such patterns areillustrated in FIGS. 2 and 3. As seen in FIG. 2, the seed holder 12 maybe a substantially circular disk and the regions 20 may be provided as aplurality of trenches extending across the disk with the regions 18being provided therebetween so as to provide a striped pattern. Thecenter-to-center spacing of the trenches 20 may be about 0.5 mm orgreater and the trenches may be from about 0.5 mm to about 5 mm inwidth.

As seen in FIG. 3, the regions 20 may be circular in shape. The circularregions 20 may have a diameter of from about 0.5 mm to about 5 mm and acenter-to-center spacing of from about 0.5 mm or greater. Preferably,the circular regions 20 may be provided in an ordered pattern, however,an asymmetric or periodic pattern could be utilized.

In addition to the patterns illustrated in FIGS. 2 and 3, other patternsmay also be utilized. For example, multiple striped patterns could beutilized to provide patterns of rectangles, diamonds or triangles.Similarly, other geometric shapes could also be utilized such asellipses or the like. The patterns may be regular, irregular, symmetric,asymmetric, periodic, non-periodic and/or combinations thereof.

The seed holders 12 illustrated in FIGS. 1 through 3 may be utilized inPVT growth of silicon carbide crystals. The seed holders 12 according toembodiments of the present invention may be utilized in conjunction withconventional PVT techniques, such as those described above in thepatents incorporated herein by reference, to provide silicon carbidecrystals with reduced defects. For example, through the use of the seedholders 12 according to embodiments of the present it is expected thatmicropipes may be reduced by up to a factor of 5 or even a factor of 10depending on the original quality of the seed crystal.

While not wishing to be bound to a particular theory of operation, FIGS.4A and 4B are an illustration of growth of silicon carbide crystal froma seed crystal 10 mounted on a seed holder 12 according to embodimentsof the present invention. As seen in FIG. 4A, the seed crystal 10includes micropipes 24 which are located in a region where preferentialgrowth occurs as a result of the increased thermal conductivity providedby the region 20 and micropipes 25 which are not located in a region ofpreferential growth. When growth begins, because of the modulation ofthe thermal profile resulting from the regions 20, growth ispreferential in the areas of reduced temperature provided by the regions20. Thus, the growth regions 22 will initially form in a patterncorresponding to the pattern of the regions 20. As can be seen in FIG.4A, the micropipes 24 may propagate into these regions. However, themicropipes do not propagate in a lateral direction. As growth continues,growth will be primarily from the sidewalls of the growth regions 22 asillustrated by the arrows in FIG. 4A. The sidewalls of the growthregions 22 eventually grow together to provide a continuous region ofsilicon carbide, however, as seen in FIG. 4B, the micropipes do notpropagate in a lateral direction from the sidewalls and, therefore, themicropipes present in the silicon carbide crystal 26 may be reduced overthose present in a silicon carbide crystal which did not experience thepreferential growth provided by the seed holders 12.

FIG. 5 illustrates further embodiments of the present invention where aconventional seed crystal holder 34 is utilized with a silicon carbideseed crystal 30 having a pattern provided therein. Silicon carbide isgrown from the silicon carbide seed crystal 30 utilizing PVT, such asthrough a sublimation growth process. The silicon carbide crystal 30 hasa first surface 35 and a second surface 31, opposite the first surface35. The pattern formed in the second surface 31 is formed so to providea plurality of regions 32 of silicon carbide which extend a firstdistance from the first surface 35 of the silicon carbide crystal and aplurality of other regions 33 which extend a second distance, differentfrom the first distance, from the first surface 35 of the siliconcarbide crystal 30.

The pattern formed by the regions 32 and 33 may be trenches, rectangles,circles, posts, or the like or combinations thereof. For example, thepattern may be as illustrated in FIGS. 2 and 3 and as described abovewith reference to the regions 20. The difference between the firstdistance and the second distance may provide a depth of from about 0.25mm and about 3 mm. Furthermore, adjacent regions 32 or adjacent regions33 may be spaced at a center-to-center distance of from about 0.5 mm toabout 3 mm or greater. The regions 32 may have a width (sidewall tosidewall) of from about 0.5 mm to about 5 mm. Similarly, the regions 33may have a width of from about 0.5 mm to about 5 mm.

The regions 32 and 33 may be provided through mechanical and/or chemicalremoval of material from a conventional silicon carbide seed crystal.For example, trenches may be formed by etching, grinding, scratching,sawing or otherwise removing material from a conventional seed crystal.Similarly, if a pattern of substantially circular regions are desired, aconventional seed crystal could be etched or drilled to provide suchcavities.

By providing a pattern in the silicon carbide seed crystal 30, thelocation of nucleation sites may be controlled so as to providepreferential growth corresponding to the pattern of the seed crystal 30.Thus, for example, in the configuration illustrated in FIG. 5, growthwould be preferential from the sidewalls of the regions 32. Thus, it isbelieved that micropipes and/or other defects may be reduced byproviding a pattern in the seed crystal 30 for substantially the samereasons as discussed above with reference to FIGS. 4A and 4B.

FIG. 6 illustrates further embodiments of the present invention wherenucleation sites are controlled by modulating the sticking coefficientof the silicon seed crystal 40 through the inclusion of regions 42 ofmaterial having a lower sticking coefficient that that of siliconcarbide so that silicon carbide is preferentially grown in the regions41 of the seed crystal 40. Thus, the silicon carbide seed crystal 40 canbe patterned with regions of material 42, such as graphite, whichprovides a mask pattern to control the pattern of nucleation. In suchembodiments, during a PVT growth process, such as a sublimation growthprocess, silicon carbide will preferentially grow in the regions 41.Such growth will eventually laterally overgrow the regions 42 such thatmicropipes and/or other defects present in the regions 41 will notpropagate into the regions which overly the regions 42. Accordingly, thenumber of defects in the resulting silicon carbide crystals may bereduced.

The pattern of the regions 42 may be similar to the patterns describedabove. Furthermore, the dimensions of the regions 42 may be similar tothe dimensions of the regions 32 and/or 33 of FIG. 5. The regions 42 maybe provided by forming a layer of graphite or other low stickingcoefficient material on a conventional silicon carbide seed crystal andetching or mechanically removing portions of the graphite to provide theregions 42 in the desired pattern.

As can be seen from the above discussion, embodiments of the presentinvention may provide silicon carbide crystals with reduced defects.Furthermore, as a result of use of various embodiments of the presentinvention the resulting silicon carbide crystals may have first regionswhich have a first defect density and second regions which have a seconddefect density which is less than the first defect density. For example,as illustrated in FIGS. 4A and 4B, the silicon carbide crystal 26 mayhave regions where defects, such as the micropipes 24, propagate fromthe seed crystal 10 and regions where such defects do not propagate.Such a reduction in defect density may not result if thermal modulation,surface modulation or sticking coefficient modulation is carried outafter a substantial amount of silicon carbide has been grown. Thus, inpreferred embodiments of the present invention, such techniques forcontrolling nucleation sites are carried out to control nucleation sitesin a seed crystal.

In the embodiments of the present invention illustrated in FIG. 1, suchfirst regions would correspond to regions of preferential growth and thesecond regions would correspond to regions where lateral growth hadoccurred. Thus, for example, if the regions 20 have a higher thermalconductivity than the body 16 of the seed holder 12, the first regionswould be above the regions 20 and the second regions would be above thebody of the seed holder. The regions, however, would be reversed if theregions 20 had a thermal conductivity of less than the thermalconductivity of the body 16 of the seed holder. Similarly, in theembodiments illustrated in FIG. 5, the first regions would correspond toregions above the regions 32 and the second regions would correspond toregions above the regions 33 of the seed crystal 30. In the embodimentsillustrated in FIG. 6, the first regions would correspond to regionsabove the regions 41 of the seed crystal 40 and the second regions wouldcorrespond to regions above the regions 42 of the mask.

Silicon carbide crystals according to embodiments of the presentinvention may have regions therein with a reduction in defect density ofa factor of up to 5 or more and preferably a factor of 10 or more overother regions in the silicon carbide crystals. Such regions of higherand lower defect density may, generally, correspond to the patternprovided in the seed holder, the seed crystal or the mask on the seedcrystal. Furthermore, it may be preferable to form a semiconductordevice or devices in the regions of lower defect density to therebyprovide semiconductor devices with improved electrical characteristicsover a corresponding device in a region of higher defect density.

As used herein, the term defect density refers to a number of defectsper unit area. Such unit area may correspond to an area in which asemiconductor device may be formed or may correspond to an area definedby the pattern of the seed holder, the seed crystal or the mask on theseed crystal. Measurement of defect density may be made usingconventional defect measurement techniques, such as those used inmeasuring micropipes and/or dislocation defects in silicon carbide. Suchtechniques may include, for example, preferential etching of SiC wafersin molten KOH, analysis by synchrotron-white beam x-ray topographyand/or optical transmission light microscopy. See e.g. R. Yakimova, A.L. Hylen, M. Tuominen, M. Syvajarvi, E. Janzen, Diamond and RelatedMaterials, 6 (1997), pp. 1456–1458 and Weimin Si, Michael Dudley,Hua-Shuang Kong, Joe Sumakeris, and Calvin Carter, Jr., Journal ofElectronic Materials, Vol. 26, No. 3, 1997.

In the drawings and specification, there have been disclosed typicalpreferred embodiments of the invention and, although specific terms areemployed, they are used in a generic and descriptive sense only and notfor purposes of limitation, the scope of the invention being set forthin the following claims.

1. A method of producing a silicon carbide boule having a substantiallysingle polytype, the method comprising: forcing nucleation sites on asurface of a silicon carbide seed crystal having the substantiallysingle polytype to a predefined pattern; and growing the silicon carbideboule utilizing physical vapor transport (PVT) so as to provideselective preferential growth of silicon carbide on the silicon carbideseed crystal corresponding to the predefined pattern; wherein forcingnucleation sites comprises forming a pattern of material other thansilicon carbide on a surface of the silicon carbide seed crystal therebyselectively exposing portions of the seed crystal to define thenucleation sites in the selectively exposed portions of the seedcrystal; wherein the pattern of material other than silicon carbideprovides a pattern of regions having a reduced sticking coefficient thanthat of the exposed portions of the seed crystal; and wherein thesilicon carbide boule grows laterally above the material other thansilicon carbide.
 2. The method of claim 1, wherein the pattern comprisesstripes on the seed crystal.
 3. The method of claim 1, wherein thepattern comprises a plurality of posts on the seed crystal.
 4. Themethod of claim 1, wherein the pattern comprises a layer of materialhaving a plurality of openings therein so as to expose portions of theseed crystal.
 5. The method of claim 4, wherein the openings aresubstantially circular.
 6. The method of claim 1, wherein the materialother than silicon carbide comprises graphite.